Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation
نویسندگان
چکیده
منابع مشابه
A periodic index separate confinement heterostructure quantum well laser
Articles you may be interested in Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy Appl. Temperature modulation molecularbeam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantumwell lasers Periodic index separate confinement heterostructure InGa...
متن کاملPeriodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy
Organometallic vapor phase epitaxy was used to grow a novel periodic index separate confinement heterostructure (PINSCH) InGaAs/AlGaAs multiple quantum well (MQW) laser. Secondary ion mass spectrometry and transmission electron microscopy were used to characterize the structure. The performance of the PINSCH laser was compared with that of a graded index separate confinement heterostructure (GR...
متن کاملMBE Growth and Characteristics of Periodic Index Separate Confinement Heterostructure InGaAs Quantum-Well Lasers
We have used solid-source molecular beam epitaxy (MBE) to grow InGaAs quantumwell lasers emitting at 980nm in a novel configuration of periodic index separate confinement heterostructure (PINSCH). Periodic multilayers (GaAs/A1GaAs) are utilized as optical confinement layers to reduce the transverse beam divergence as well as to increase the maximum output power. The multilayers are grown by tem...
متن کاملDegradation of AlGaN-based ultraviolet light emitting diodes
Aging the LEDs by driving at high current, results in the decrease of optical power proportional to the reciprocal square route of stress time. With aging time, change in the current–voltage characteristics indicates decrease of the current at low voltage below the light emission threshold, decrease of the forward voltage drop at high currents and usually no change in the series resistance. No ...
متن کاملAlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers
AlGaN-based deep-ultraviolet light-emitting diode (LED) structures, which radiate light at 305 and 290 nm, have been grown on sapphire substrates using an AlN epilayer template. The fabricated devices have a circular geometry to enhance current spreading and light extraction. Circular UV LEDs of different sizes have been characterized. It was found that smaller disk LEDs had higher saturation o...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ACS Photonics
سال: 2018
ISSN: 2330-4022,2330-4022
DOI: 10.1021/acsphotonics.8b00538